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| BCP 51, BCP 52, BCP 53 PNP General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 1.65 4 0.2 0.3 6.5 0.1 3 0.2 1.3 W SOT-223 0.04 g Plastic case Kunststoffgehause 3.5 Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1 0.7 2.3 2 3 3.25 Dimensions / Mae in mm 1 = B 2, 4 = C 3 = E Maximum ratings (TA = 25/C) BCP 51 Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (DC) Peak Collector current - Koll.-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCE0 - VCB0 - VEB0 Ptot - IC - ICM - IBM Tj TS 45 V 45 V 7 Grenzwerte (TA = 25/C) BCP 52 60 V 60 V 5V 1.3 W 1) 1A 1.5 A 200 mA 150/C - 65...+ 150/C BCP 53 80 V 100 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 30 V IE = 0, - VCB = 30 V, Tj = 125/C Emitter-Base cutoff current - Emitterreststrom IC = 0, - VEB = 5 V - IC = 500 mA, - IB = 50 mA - IEB0 - VCEsat - - - ICB0 - ICB0 - - Kennwerte (Tj = 25/C) Typ. - - - - Max. 100 nA 10 :A 100 nA 500 mV Collector saturation volt. - Kollektor-Sattigungsspg. 2) ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 24 01.11.2003 1 General Purpose Transistors Characteristics (Tj = 25/C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis 1) BCP 5x-6 - VCE = 2 V, - IC = 150 mA - VCE = 2 V, - IC = 5 mA - VCE = 2 V, - IC = 500 mA - VCE = 2 V, - IC = 500 mA Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Thermal resistance - Warmewiderstand junction to ambient air - Sperrschicht zu umgebender Luft junction to soldering point - Sperrschicht zu Lotpad Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren fT - BCP 5x-10 BCP 5x-16 hFE hFE hFE 40 63 100 63 40 - BCP 51, BCP 52, BCP53 Kennwerte (Tj = 25/C) Typ. - - - - - - 115 MHz RthA RthS Max. 100 160 250 - - 1V - 95 K/W 2) 14 K/W hFE BCP 51... BCP53 hFE - VBEon Base-Emitter voltage - Basis-Emitter-Spannung 1) BCP 54, BCP 55, BCP 56 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 25 |
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